Pii: S0040-6090(99)01077-9
نویسندگان
چکیده
In this paper, we report a buffering method of improving the quality of ITO thin ®lms on glass by r.f. magnetron sputtering. By applying a ZnO buffer before the ITO deposition in the same run of sputtering, ITO ®lms showed single (111)-oriented highly textured structure, while ITO ®lms showed mixed-oriented polycrystalline structure on bare glass. A design of experiment was taken out to minimize the resistivity of ITO ®lms in the deposition parameter space (oxygen ratio, total gas pressure, and temperature). Resistance measurements showed that the ITO ®lms with ZnO buffers had a remarkable 50% decrease of resistivity comparing to those without ZnO buffers at optimized deposition condition. Room-temperature Hall effect measurements showed that the decrease in resistivity comes from a large increase of mobility and a slight increase of carrier density after forming gas annealing. The ZnO/glass may be a good alternative substrate to bare glass for producing high quality ITO ®lms for advanced electro-optic applications. q 2000 Elsevier Science S.A. All rights reserved.
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